Cite
HARVARD Citation
Ding, X. et al. (2017). Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator. Molecular crystals and liquid crystals. pp. 235-242. [Online].
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Ding, X. et al. (2017). Stability enhancement in InGaZnO thin-film transistor with a novel Al2O3/HfO2/Al2O3 as gate insulator. Molecular crystals and liquid crystals. pp. 235-242. [Online].