Correlation between the structural change and the electrical transport properties of indium nitride under high pressure. Issue 39 (26th September 2017)

• Record Type: Journal Article
• Authors: Zhang, Junkai; Qi, Ji; Ma, Yanzhang; Hu, Tingjing; Yan, Jiejuan; Ke, Feng; Cui, Xiaoyan; Gao, Yang; Sun, Meiling; Gao, Chunxiao
• Is Part Of: Physical chemistry chemical physics. Volume 19:Issue 39(2017)
• Page Start: 26758
• Page End: 26764
• Publication Date: 2017-09-26
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c7cp05105k
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Pressure realized modulation of electrical performance and the direct-indirect gap transformation of InN during the wurtzite–rocksalt structural transition. Abstract : We report on the intriguing structural and electrical transport properties of compressed InN. Pronounced anomalies of the resistivity, Hall coefficient, electron concentration, and mobility are observed at ∼11.5 GPa, accompanied by a wurtzite–rocksalt structural transition confirmed using high-pressure XRD measurements and first-principles calculations. The pressure-tuned electrical properties of wurtzite and rocksalt InN are also studied, respectively. Particularly, compression pressure significantly decreases the electron concentration of rocksalt InN by two orders of magnitude and increases the mobility by ten fold. The obvious variations in electrical parameters can be rationalized by our band structure simulations, which reveal a direct–indirect energy crossover at 10 GPa, followed by the rapidly increasing patterns of the energy gap with a pressure coefficient of 33 meV GPa −1 . Moreover the electron effective mass and energy gap are found to well satisfy with the k · p model. Definite correlation between the structural change and the electrical transport properties should shed a new light on building InN-based applications in the future.