Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching. Issue 12 (7th August 2017)

• Record Type: Journal Article
• Authors: Sokolov, Andrey S.; Son, Seok Ki; Lim, Donghwan; Han, Hoon Hee; Jeon, Yu‐Rim; Lee, Jae Ho; Choi, Changhwan
• Is Part Of: Journal of the American Ceramic Society. Volume 100:Issue 12(2017)
• Page Start: 5638
• Page End: 5648
• Publication Date: 2017-08-07
• Subjects: dielectric materials/properties -- electrical properties -- semiconductors -- thin; Ceramics -- Periodicals; 620.1405
• DOI: 10.1111/jace.15100
• Languages: English
• ISSNs: 0002-7820

Abstract

Abstract: The comparison of resistive switching (RS) storage in the same device architecture is explored for atomic layer deposition (ALD) Al2 O3, HfO2 and HfAlO x ‐based resistive random access memory (ReRAM) devices. Among them, the deeper high‐ and low‐ resistance states, more uniform V SET ‐ V RES, persistent R OFF / R ON (>10 2 ) ratio and endurance up to 10 5 cycles during both DC and AC measurements were observed for HfAlO x ‐based device. This improved behavior is attributed to the intermixing of amorphous Al2 O3 /HfO2 oxide layers to form amorphous thermally stable HfAlO x thin films by consecutive‐cycled ALD. In addition, the higher oxygen content at Ti/HfAlO x thin films interface was found within the energy dispersive spectroscopy analysis (EDS). We believe this higher oxygen content at the interface could lead to its sufficient storage and supply, leading to the stable filament reduction‐oxidation operation. Further given insight to the RS mechanism, SET/RESET power necessities and scavenging effect shed a light to the enhancement of HfAlO x ‐based ReRAM device as well.