Thermal transport in thin dielectric films with minute size aluminum dot in relation to microelectronics. (25th December 2017) - Ali, Haider
Highlights: Equivalent equilibrium temperature increases in close region of aluminum dot. Low temperature edges of film act like phonon sink lowering phonon intensity in close region to edges. Temporal variation of equivalent equilibrium temperature does not follow temperature distribution at aluminum dot edge. Emitted phonons undergo scattering in close region of aluminum dot modifying temporal response of temperature. Abstract: Thermal energy transfer across the thin silicon and diamond films with the presence of aluminum minute size dot is studied. The thin films are thermally disturbed by the aluminum dot edges at which the time is exponentially increasing temperature profile was introduced. Transient and frequency dependent Boltzmann equation is incorporated to formulate the phonon transport across the film. A numerical solution incorporating the discrete ordinate method is adopted to compute the phonon intensity distribution. The equivalent equilibrium temperature is introduced to quantify the phonon intensity distribution, in terms of temperature variation, in the film. It is found that equivalent equilibrium temperature decays sharply in the close region of the aluminum dot because of scattering of emitted phonons from the aluminum dot edge. Temporal variation of equivalent equilibrium temperature does not follow exactly temperature rise at the aluminum dot edge because of scattering of phonons in the film.