Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping. Issue 30 (11th May 2016)

• Record Type: Journal Article
• Authors: Devender, ; Gehring, Pascal; Gaul, Andrew; Hoyer, Alexander; Vaklinova, Kristina; Mehta, Rutvik J.; Burghard, Marko; Borca‐Tasciuc, Theodorian; Singh, David J.; Kern, Klaus; Ramanath, Ganpati
• Is Part Of: Advanced materials. Volume 28:Issue 30(2016)
• Page Start: 6436
• Page End: 6441
• Publication Date: 2016-05-11
• Subjects: doping -- high figure‐of‐merit -- thermoelectric nanomaterials -- topological insulators; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601256
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Dilute isovalent sulfur doping simultaneously increases electrical conductivity and Seebeck coefficient in Bi2 Te2 Se nanoplates, and bulk pellets made from them. This unusual trend at high electron concentrations is underpinned by multifold increases in electron effective mass attributable to sulfur‐induced band topology effects, providing a new way for accessing a high thermoelectric figure‐of‐merit in topological‐insulator‐based nanomaterials through doping.