Round‐robin test for the measurement of layer thickness of multilayer films by secondary ion mass spectrometry depth profiling. (27th July 2017)

• Record Type: Journal Article
• Authors: Kim, Kyung Joong; Jang, Jong Shik; Bennett, Joe; Simons, David; Barozzi, Mario; Takano, Akio; Li, Zhanping; Magee, Charles
• Is Part Of: Surface and interface analysis. Volume 49:Number 11(2017)
• Page Start: 1057
• Page End: 1063
• Publication Date: 2017-07-27
• Subjects: 50 at% definition -- interface location -- multilayer -- SIMS -- thickness measurement; Surfaces (Physics) -- Periodicals; Surface chemistry -- Periodicals; Thin films -- Periodicals; 541.33
• DOI: 10.1002/sia.6277
• Languages: English
• ISSNs: 0142-2421

Abstract

Abstract : An international round‐robin test (RRT) was performed to investigate a method to determine the interface location and the layer thickness of multilayer films by secondary ion mass spectrometry (SIMS) depth profiling as a preliminary study to develop a new work item proposal in ISO/TC‐201. Two types of reference materials were used in this RRT. A SiGe alloy (Si52.4 Ge47.6 ) reference film was used to determine the relative sensitivity factors of Si and Ge. A Si/Ge multilayer reference film was used to determine the relative sputtering rates of the Si and Ge layers. The layer thicknesses were measured from the interfaces determined by a 50 atomic percent definition. Seven laboratories from 5 countries participated in this international RRT. The RRT reference expanded uncertainties for Si and Ge layers in a Si/Ge multilayer with similar thicknesses as the reference film were 0.76 and 1.17 nm, respectively. However, those in a thinner Si/Ge multilayer film were slightly larger at 1.04 and 1.59 nm, respectively. Most of the thickness ratios in the 2 Si/Ge multilayer films were consistent with the RRT reference value within their expanded uncertainties.