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HARVARD Citation
Kim, H. et al. (n.d.). Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films. Physica status solidi. 9 (4), pp. 264-268. [Online].
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Kim, H. et al. (n.d.). Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films. Physica status solidi. 9 (4), pp. 264-268. [Online].