Adaptive and optimum multiport readout of non-gated crossbar memory arrays. (September 2017)

• Record Type: Journal Article
• Authors: Emara, Ahmed A.M.; Aboudina, Mohamed M.; Fahmy, Hossam A.H.
• Is Part Of: Microelectronics journal. Volume 67(2017)
• Page Start: 162
• Page End: 168
• Publication Date: 2017-09
• Subjects: Memristor -- Memory -- Sneak paths -- Non-gated arrays; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2017.08.007
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: Non-gated crossbar memory arrays are becoming strong candidates to replace the current gated arrays due to their much higher density. Sneak paths are the main problem in gate-less arrays. In this paper, we analyze a three reading multiport readout method for non-gated memory arrays, study its limitation versus the OFF/ON impedance ratio of the memory cell as well as the ratio between the 1 s and 0 s memory cells. We provide an accurate threshold that increases the noise margins that takes these factors into consideration and we also introduce an adaptive threshold that tracks the 1 s and 0 s density variations over time. Finally, we propose a sensing circuit that accumulates the three reading without the need for extra complicated circuitry to evaluate the read memory cell value.