Enhanced intervalley scattering of aluminum oxide-deposited graphene. (November 2017)

• Record Type: Journal Article
• Authors: Iqbal, Muhammad Zahir; Siddique, Salma; Rehman, Adil
• Is Part Of: Carbon. Volume 124(2017)
• Page Start: 188
• Page End: 192
• Publication Date: 2017-11
• Subjects: Carbon -- Periodicals; Carbone -- Périodiques; Koolstof; Toepassingen; Electronic journals; 546.681
• DOI: 10.1016/j.carbon.2017.07.067
• Languages: English
• ISSNs: 0008-6223

Abstract

Abstract: In this article, we report the weak localization effect of aluminum oxide (Al2 O3 )-deposited graphene field effect transistor. Initially, the resistivity tunability of graphene and Al2 O3 -deposited graphene devices were studied by applying gate voltages. Furthermore, the magnetotransport properties were investigated as a function of gate voltages and temperatures. It was observed that the phase coherence and intervalley scattering rates are enhanced with the deposition of Al2 O3 on graphene film compared to uncovered graphene. Most transistor device fabrication processes use an oxide layer for top gate. Therefore, it would be interesting to explore the effect of an oxide capping layer on the magnetotransport properties of graphene. Graphical abstract: