Atomic Layer Deposition of Cerium Dioxide Film on TiN and Si Substrates: Structural and Chemical Properties. (5th June 2017)

• Record Type: Journal Article
• Authors: Vangelista, Silvia; Piagge, Rossella; Ek, Satu; Sarnet, Tiina; Ghidini, Gabriella; Lamperti, Alessio
• Is Part Of: MRS advances. Volume 2:Number 52(2017)
• Page Start: 3005
• Page End: 3010
• Publication Date: 2017-06-05
• Subjects: atomic layer deposition, -- x-ray diffraction (XRD), -- x-ray photoelectron spectroscopy (XPS); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2017.404
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: Cerium dioxide (CeO2 ) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2 /Si or <111> for CeO2 /TiN. In correspondence, we measure a relative concentration of Ce 3+ equals to 22.0% in CeO2 /Si and around 18% in CeO2 /TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results underline the films differences and similarities between ALD-deposited CeO2 either on Si or TiN substrates, thus extending the knowledge on the CeO2 structural and chemical properties.