Microstructure and improved electrical properties of Ti-substituted BiFeO3 thin films. (November 2017)

• Record Type: Journal Article
• Authors: Sharma, Govind N.; Dutta, Shankar; Pandey, Akhilesh; Singh, Sushil Kumar; Chatterjee, Ratnamala
• Is Part Of: Materials research bulletin. Volume 95(2017)
• Page Start: 223
• Page End: 228
• Publication Date: 2017-11
• Subjects: A. thin films -- B. microstructure -- C. X-ray diffraction -- D. electrical properties; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2017.07.046
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: Ti-substituted (0–10 atom%) BiFeO3 films deposited by sol-gel technique. The lattice parameters are reduced up-to 0.38% and 1.43% in a and c directions. Grain sizes of the BFO films are found to be increasing with the Ti-substitution. Improved remnant polarization (70 μC/cm 2 ) is observed in the doped BFO films. Leakage current of the doped films is up-to 3 orders lower than the pristine film. Abstract: This paper discussed about the effects of Ti-substitution (0–10 atom%) at Fe-site on the structure and electrical properties of BiFeO3 (BFO) films deposited by sol-gel technique. The lattice parameters of the phase pure (perovskite) polycrystalline BFO films are found to be reduced up-to 0.38% and 1.43% in a and c directions respectively due to the Ti-substitution. Grain sizes of the BFO films are found to be increasing with the Ti-substitution. The maximum remnant polarization of 70 μC/cm 2 is observed in 2.5% Ti-substituted BFO film. The leakage current density (∼10 −4 A/cm 2 at 0.6 MV/cm applied electric field) of the Ti substituted BFO film (10%) is found to be three orders lower than the pristine BFO film. Reason for the improved electrical properties seems to be due to replacement of Fe 3+ withTi 4+ ions which in turn might help in reducing the effect of oxygen vacancies defects.