Effect of Ar ion-beam-assistance and substrate temperature on physical properties of Al-doped ZnO thin films deposited by RF magnetron sputtering. (November 2017)

• Record Type: Journal Article
• Authors: Sreedhar, Adem; Kwon, Jin Hyuk; Yi, Jonghoon; Gwag, Jin Seog
• Is Part Of: Materials research bulletin. Volume 95(2017)
• Page Start: 451
• Page End: 458
• Publication Date: 2017-11
• Subjects: A. Thin films -- B. Sputtering -- C. Atomic force microscopy -- D. Crystal structure; Materials -- Periodicals; Crystal growth -- Periodicals; Matériaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Crystal growth; Materials; Periodicals; 620.11
• DOI: 10.1016/j.materresbull.2017.07.034
• Languages: English
• ISSNs: 0025-5408

Abstract

Graphical abstract: Highlights: AZO and IAZO (303–473 K) films were grown by RF magnetron sputtering technique. Ar ion-beam converts its kinetic energy as diffusion energy to the deposited atoms. Structural evolution relies on diffusion energy imparted to the deposited atoms. Surface texture densify under the aid of ion-beam and substrate temperature. Abstract: In this study, pronounced effects of ion-beam-assistance and substrate temperature were revealed by exploring the physical properties of Al-doped ZnO thin films deposited by the RF magnetron sputtering technique. Herein, two measurable parameters, ion-beam discharge current (0.1 A) and substrate temperature (303–473 K) were adopted to regulate the structural changes in Al-doped ZnO films. Specifically, progressive structural changes were achieved based on the addition of Ar ion-beam during the film growth. From XRD analysis, we observed significant structural changes that provided an improvement in the film growth towards c-axis (002) plane. In addition, FESEM and AFM analyses demonstrated excellent surface features with the assisted Ar ion-beam. As a result of this process, we effectively modulated the binding energy of Zn 2p level. Finally, the structural investigation accurately demonstrated that the dependence of assisted ion-beam and substrate temperature linearly related to the superior visible transmittance and reduced band gap.