Progress of Large‐Scale Synthesis and Electronic Device Application of Two‐Dimensional Transition Metal Dichalcogenides. Issue 35 (19th July 2017)

• Record Type: Journal Article
• Authors: Song, Xiongfei; Guo, Zhongxun; Zhang, Qiaochu; Zhou, Peng; Bao, Wenzhong; Zhang, David Wei
• Is Part Of: Small. Volume 13:Issue 35(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-07-19
• Subjects: 2D materials -- electronics -- transition metal dichalcogenides; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201700098
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : The recent exploration of semiconducting two‐dimensional (2D) transition metal dichalcogenides (TMDs) with atomic thickness has taken both the scientific and technological communities by storm. Extensively investigated TMD that are accessible by large‐scale synthetic methods materials are remarkably stable, such as MoS2 and WSe2 . They allow superior gate control due to their 2D nature and favorable electronic transport properties, thus suggesting a bright future for digital and RF electronics. In this review, the latest developments in the controlled synthesis of large scale TMDs are firstly introduced by discussing various approaches. The major obstacles that must be overcome to achieve wafer‐scale, uniform, and high‐quality TMD films for practical electronic applications are included. Advances in the electronic transport studies of TMDs are presented, such as doping, contact engineering, and mobility improvement, which contribute to overall device performance. A perspective and a look at the future for this field is provided in closing. Abstract : The latest developments in the controlled synthesis of large scale layered transition metal dichalcogenides (TMDs) are reviewed by discussing various approaches. The major obstacles that must be overcome to achieve wafer‐scale, uniform, and high‐quality TMD films for practical electronic applications are included. Advances in the electronic transport studies of TMDs are presented, such as doping, contact engineering, and mobility improvement, which contribute to overall device performance. A perspective and a look at the future for this field is lastly provided.