Regioirregular ambipolar naphthalenediimide‐based alternating polymers: Synthesis, characterization, and application in field‐effect transistors. Issue 21 (18th August 2017)

• Record Type: Journal Article
• Authors: Lin, Zuzhang; Liu, Xiaotong; Zhang, Weifeng; Wei, Congyuan; Huang, Jianyao; Chen, Zhihui; Wang, Liping; Yu, Gui
• Is Part Of: Journal of polymer science. Volume 55:Issue 21(2017)
• Page Start: 3627
• Page End: 3635
• Publication Date: 2017-08-18
• Subjects: ambipolar carrier transport -- asymmetric units -- field‐effect transistors -- naphthalenediimide -- polymer semiconductors; 547
• DOI: 10.1002/pola.28747
• Languages: English
• ISSNs: 0887-624X

Abstract

ABSTRACT: In this work, we report the synthesis, characterization, and application of two regioirregular naphthalenediimide (NDI)‐based alternating conjugated polymers, namelyP1 andP2, in which nitrile‐substituted moiety, 2, 3‐bis(thiophen‐2‐yl)acrylonitrile and NDI moiety act as donor and acceptor unit, respectively. The two regioirregular polymers possess low‐lying LUMO energy levels of −3.92 eV forP1 and −3.96 eV forP2 . Both polymers possess typical dual‐band UV−Vis−NIR absorption profiles of NDI‐based polymers, and show broadened and red‐shifted absorption spectra in the solid state compared with those in solutions. Field‐effect transistor devices with top‐gate bottom‐contact configuration were used to evaluate the polymers' semiconducting properties. The two polymers exhibited promising and air‐stable ambipolar charge transport characteristics. Thin film microstructure investigations (AFM and 2D‐GIXRD) suggest both polymers formed continuous and smooth thin films, and adopted predominantly face‐on molecular packing in the solid state. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem.2017, 55, 3627–3635 Abstract : This research synthesized two regioirregular naphthalenediimide‐based alternating polymers, P1 andP2, that contained nitrile‐substituted moiety, 2, 3‐bis(thiophen‐2‐yl)acrylonitrile. According to the experiments and DFT calculation, the paper discusses the introduction of nitriles to the polymer in detail. A top‐gate/bottom‐contact device configuration was applied to fabricate FET devices based on the two NDI‐based copolymers. Both polymers exhibited ambipolar charge transport behaviors.