Cite
HARVARD Citation
Kumar, M. et al. (2017). Improved performance of impact ionization MOSFETs by using dopingless concept and strained channel. Superlattices and microstructures. pp. 763-771. [Online].
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Kumar, M. et al. (2017). Improved performance of impact ionization MOSFETs by using dopingless concept and strained channel. Superlattices and microstructures. pp. 763-771. [Online].