Cite
HARVARD Citation
Lin, J. et al. (2017). Resistive switching in a metal-insulator-metal device with γ-APTES as the insulator layer. Solid-state electronics. pp. 86-91. [Online].
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Lin, J. et al. (2017). Resistive switching in a metal-insulator-metal device with γ-APTES as the insulator layer. Solid-state electronics. pp. 86-91. [Online].