Effects of ZnO seed layer thickness on catalyst-free growth of ZnO nanostructures for enhanced UV photoresponse. (1st January 2018)

• Record Type: Journal Article
• Authors: Alsultany, Forat H.; Hassan, Z.; Ahmed, Naser M.; Elafadill, Nezar G.; Abd, Hassnen R.
• Is Part Of: Optics & laser technology. Volume 98(2018)
• Page Start: 344
• Page End: 353
• Publication Date: 2018-01-01
• Subjects: Optics -- Periodicals; Lasers -- Periodicals; Electronic journals; 621.366
• DOI: 10.1016/j.optlastec.2017.06.031
• Languages: English
• ISSNs: 0030-3992

Abstract

Graphical abstract: Highlights: Various morphologies of ZnO nanostructures were synthesized on glass substrate. Controlling the growth mechanism of ZnO nanostructures was conducted using various ZnO seed layer thicknesses. The crystal quality of ZnO nanostructures strongly depends on the seed layer thickness. MSM UV photodetectors fabricated on ZnO nanostructures at different ZnO seed layer thickness coated glass substrates. Abstract: Catalyst-free growth of ZnO nanostructures were synthesized on ZnO seed layers with different thickness (25–150 nm) coated glass substrates by thermal evaporation method. Prior to the growth process, the sputtered ZnO seed layers were annealed using the continuous wave CO2 laser as a heat source at 450 °C in air for 15 min. The fabrication and characterization of a metal–semiconductor–metal ultraviolet photodetectors based on ZnO nanostructures with different thickness of seed layer were successfully fabricated. Upon exposure to 365 nm light (1.5 mW/cm 2 ) at five-bias voltage, the device with 100 nm thick seed layer showed a relatively high UV sensitivity, quick response, and high responsivity. The prototype device shows a cost effective glass substrate using thermal evaporation method for ZnO nanostructures synthesis and demonstrates the possibility of constructing nanoscale photodetectors for nano-optics applications.