Monolithic integration of an InP-based 4 × 25 GHz photodiode array to an O-band arrayed waveguide grating demultiplexer. (1st December 2017)

• Record Type: Journal Article
• Authors: Ye, Han; Han, Qin; Lv, Qianqian; Pan, Pan; An, Junming; Yang, Xiaohong
• Is Part Of: Optics & laser technology. Volume 97(2017)
• Page Start: 290
• Page End: 296
• Publication Date: 2017-12-01
• Subjects: Uni-traveling carrier photodiode -- Arrayed waveguide grating -- Monolithic integration -- Selective area growth -- Butt-joint; Optics -- Periodicals; Lasers -- Periodicals; Electronic journals; 621.366
• DOI: 10.1016/j.optlastec.2017.07.009
• Languages: English
• ISSNs: 0030-3992

Abstract

Highlights: Monolithic integration of AWG to UTC-PD on the InP platform by SAG. Uniform 4 × 25 GHz PD bandwidth for potential 100 Gbps usage. Systematic work from device butt-joint design, fabrication to measurement. High PD quantum efficiency of 77% confirmed by experiments. Abstract: We demonstrate the monolithic integration of a uni-traveling carrier photodiode array with a 4 channel, O-band arrayed waveguide grating demultiplexer on the InP platform by the selective area growth technique. An extended coupling layer at the butt-joint is adopted to ensure both good fabrication compatibility and high photodiode quantum efficiency of 77%. The fabricated integrated chip exhibits a uniform bandwidth over 25 GHz for each channel and a crosstalk below −22 dB.