Cite
HARVARD Citation
Margetis, J. et al. (2017). Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy. Materials science in semiconductor processing. pp. 38-43. [Online].
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Margetis, J. et al. (2017). Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy. Materials science in semiconductor processing. pp. 38-43. [Online].