Low‐temperature hollow cathode plasma‐assisted atomic layer deposition of crystalline III‐nitride thin films and nanostructures. Issue 4 (18th March 2015)

• Record Type: Journal Article
• Authors: Ozgit‐Akgun, Cagla; Goldenberg, Eda; Bolat, Sami; Tekcan, Burak; Kayaci, Fatma; Uyar, Tamer; Okyay, Ali Kemal; Biyikli, Necmi
• Is Part Of: Physica status solidi. Volume 12:Issue 4/5(2015:Apr.)
• Page Start: 394
• Page End: 398
• Publication Date: 2015-03-18
• Subjects: AlN -- GaN -- InN -- atomic layer deposition (ALD) -- hollow cathode plasma; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400167
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Hollow cathode plasma‐assisted atomic layer deposition (HCPA‐ALD) is a promising technique for obtaining III‐nitride thin films with low impurity concentrations at low temperatures. Here we report our previous and current efforts on the development of HCPA‐ALD processes for III‐nitrides together with the properties of resulting thin films and nanostructures. The content further includes nylon 6, 6‐GaN core‐shell nanofibers, proof‐of‐concept thin film transistors and UV photodetectors fabricated using HCPA‐ALD‐grown GaN layers, as well as InN thin films deposited by HCPA‐ALD using cyclopentadienyl indium and trimethylindium precursors. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)