Cite
HARVARD Citation
Polyakov, A. et al. (n.d.). Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy. Physica status solidi. 12 (4), pp. 341-344. [Online].
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Polyakov, A. et al. (n.d.). Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy. Physica status solidi. 12 (4), pp. 341-344. [Online].