SCM and SIMS investigations of unintentional doping in III‐nitrides. Issue 4 (18th March 2015)

• Record Type: Journal Article
• Authors: Kappers, M. J.; Zhu, T.; Sahonta, S.‐L.; Humphreys, C. J.; Oliver, R. A.
• Is Part Of: Physica status solidi. Volume 12:Issue 4/5(2015:Apr.)
• Page Start: 403
• Page End: 407
• Publication Date: 2015-03-18
• Subjects: MOVPE -- GaN -- InGaN -- AlInN -- SCM -- SIMS; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201400206
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: Cross‐sectional scanning capacitance microscopy measurements of unintentionally doped model structures for InGaN quantum wells, GaN barriers and AlInN electron‐blocking layers showed n ‐type conductivity for the In‐containing layers. Secondary ion mass spectrometry indicated that oxygen impurities are the likely source of the electron density in the model layers. The n ‐type conductivity as well as the oxygen impurity level increases to ∼10 18 cm ‐3 for AlInN lattice‐matched to GaN. These results suggest that the background electron concentration due to oxygen impurities in indium‐containing layers needs to be considered in the design and theoretical modelling of device structures. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)