Cite
HARVARD Citation
Lim, C. et al. (2017). Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy. Physica status solidi. 214 (9), p. n/a. [Online].
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Lim, C. et al. (2017). Effect of Al incorporation in nonpolar m‐plane GaN/AlGaN multi‐quantum‐wells using plasma‐assisted molecular‐beam epitaxy. Physica status solidi. 214 (9), p. n/a. [Online].