Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors. (2nd May 2017)

• Record Type: Journal Article
• Authors: Laudari, Amrit; Gangopadhyay, Shubhra; Guha, Suchismita
• Is Part Of: MRS advances. Volume 2:Number 51(2017)
• Page Start: 2951
• Page End: 2956
• Publication Date: 2017-05-02
• Subjects: electrical properties, -- ferroelectric, -- organic; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2017.324
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: A comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6, 13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.