Subtle Roles of Sb and S in Regulating the Thermoelectric Properties of N‐Type PbTe to High Performance. Issue 18 (22nd May 2017)

• Record Type: Journal Article
• Authors: Tan, Gangjian; Stoumpos, Constantinos C.; Wang, Si; Bailey, Trevor P.; Zhao, Li‐Dong; Uher, Ctirad; Kanatzidis, Mercouri G.
• Is Part Of: Advanced energy materials. Volume 7:Issue 18(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-22
• Subjects: doping -- n‐type PbTe -- thermal conductivity -- thermoelectrics; Energy harvesting -- Materials -- Periodicals; Energy conversion -- Materials -- Periodicals; Energy storage -- Materials -- Periodicals; Photovoltaics -- Periodicals; Fuel cells -- Periodicals; Thermoelectric materials -- Periodicals; 621.31
• DOI: 10.1002/aenm.201700099
• Languages: English
• ISSNs: 1614-6832

Abstract

Abstract : A high ZT (thermoelectric figure of merit) of ≈1.4 at 900 K for n‐type PbTe is reported, through modifying its electrical and thermal properties by incorporating Sb and S, respectively. Sb is confirmed to be an amphoteric dopant in PbTe, filling Te vacancies at low doping levels (<1%), exceeding which it enters into Pb sites. It is found that Sb‐doped PbTe exhibits much higher carrier mobility than similar Bi‐doped materials, and accordingly, delivers higher power factors and superior ZT . The enhanced electronic transport is attributed to the elimination of Te vacancies, which appear to strongly scatter n‐type charge carriers. Building on this result, the ZT of Pb0.9875 Sb0.0125 Te is further enhanced by alloying S into the Te sublattice. The introduction of S opens the bandgap of PbTe, which suppresses bipolar conduction while simultaneously increasing the electron concentration and electrical conductivity. Furthermore, it introduces point defects and induces second phase nanostructuring, which lowers the lattice thermal conductivity to ≈0.5 W m −1 K −1 at 900 K, making this material a robust candidate for high‐temperature (500–900 K) thermoelectric applications. It is anticipated that the insights provided here will be an important addition to the growing arsenal of strategies for optimizing the performance of thermoelectric materials. Abstract : High n‐type thermoelectric figure of merit ZT = 1.4 at 900 K is achieved in Sb‐doped PbTe alloyed with PbS. Sb enhances the power factor of PbTe, while PbS alloying significantly reduces the thermal conductivity. The high performance achieved with n‐type PbTe makes it a robust material for mid‐to‐high temperature thermoelectric power generation.