1D copper nanowires for flexible printable electronics and high ampacity wires. Issue 35 (29th August 2017)

• Record Type: Journal Article
• Authors: Aziz, Atif; Zhang, Tan; Lin, Yen-Hao; Daneshvar, Farhad; Sue, Hung-Jue; Welland, Mark Edward
• Is Part Of: Nanoscale. Volume 9:Issue 35(2017)
• Page Start: 13104
• Page End: 13111
• Publication Date: 2017-08-29
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c7nr02478a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The synthesis and ampacity of copper nanowires is studied in detail. Chemically grown copper nanowires exhibit an ampacity of about 3 × 10 7 A cm −2 . Abstract : This paper addresses the synthesis and a detailed electrical analysis of individual copper nanowires (CuNWs). One dimensional CuNWs are chemically grown using bromide ions (Br − ) as a co-capping agent. By partially replacing alkyl amines with Br −, the isotropic growth on Cu seeds was suppressed during the synthesis. To study the electrical properties of individual CuNWs, a fabrication method is developed which does not require any e-beam lithography process. Chemically grown CuNWs have an ampacity of about 30 million amps per cm 2, which is more than one order of magnitude larger than bulk Cu. These good quality, easy to synthesize CuNWs are excellent candidates for creating high ampacity wires and flexible printable electronics.