The fluctuating population of Sm 4f configurations in topological Kondo insulator SmB6 explored with high-resolution X-ray absorption and emission spectra. Issue 35 (23rd August 2017)

• Record Type: Journal Article
• Authors: Lee, Jenn-Min; Haw, Shu-Chih; Chen, Shi-Wei; Chen, Shin-Ann; Ishii, Hirofumi; Tsuei, Ku-Ding; Hiraoka, Nozomu; Liao, Yen-Fa; Lu, Kueih-Tzu; Chen, Jin-Ming
• Is Part Of: Dalton transactions. Volume 46:Issue 35(2017)
• Page Start: 11664
• Page End: 11668
• Publication Date: 2017-08-23
• Subjects: Chemistry, Inorganic -- Periodicals; Chemistry, Physical and theoretical -- Periodicals; Chemistry, Inorganic -- Periodicals; 546.05
• DOI: 10.1039/c7dt02039b
• Languages: English
• ISSNs: 1477-9226

Abstract

Abstract : RXES of SmB6 probed at (a) 300 K and (b) 10 K. The decomposed characteristics are drawn in (c). Abstract : High-resolution partial-fluorescence-yield X-ray absorption and resonant X-ray emission spectra were used to characterize the temperature dependence of Sm 4f configurations and orbital/charge degree of freedom in SmB6 . The variation of Sm 4f configurations responds well to the formed Kondo gap, below 140 K, and an in-gap state, below 40 K. The topological in-gap state is correlated with the fluctuating population of Sm 4f configurations that arises via carrier transfer between 3d 9 4f 6 and 3d 9 4f 5 states; both states are partially delocalized, and the mediating 5d orbital plays the role of a transfer path. Complementary results shown in this work thus manifest the importance of configuration fluctuations and orbital delocalization in the topological surface state of SmB6 .