Decompression‐Driven Superconductivity Enhancement in In2Se3. Issue 34 (10th July 2017)

• Record Type: Journal Article
• Authors: Ke, Feng; Dong, Haini; Chen, Yabin; Zhang, Jianbo; Liu, Cailong; Zhang, Junkai; Gan, Yuan; Han, Yonghao; Chen, Zhiqiang; Gao, Chunxiao; Wen, Jinsheng; Yang, Wenge; Chen, Xiao‐Jia; Struzhkin, Viktor V.; Mao, Ho‐Kwang; Chen, Bin
• Is Part Of: Advanced materials. Volume 29:Issue 34(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-07-10
• Subjects: layered materials -- phonon‐modulated superconductivity -- pressure -- structural transition -- superconductivity enhancement; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201701983
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : An unexpected superconductivity enhancement is reported in decompressed In2 Se3 . The onset of superconductivity in In2 Se3 occurs at 41.3 GPa with a critical temperature ( T c ) of 3.7 K, peaking at 47.1 GPa. The striking observation shows that this layered chalcogenide remains superconducting in decompression down to 10.7 GPa. More surprisingly, the highest T c that occurs at lower decompression pressures is 8.2 K, a twofold increase in the same crystal structure as in compression. It is found that the evolution of T c is driven by the pressure‐induced R ‐3 m to I ‐43 d structural transition and significant softening of phonons and gentle variation of carrier concentration combined in the pressure quench. The novel decompression‐induced superconductivity enhancement implies that it is possible to maintain pressure‐induced superconductivity at lower or even ambient pressures with better superconducting performance. Abstract : Superconductivity enhancement in pressure quenching is observed in the layered material In2 Se3 . In situ high‐pressure resistance and magnetic measurements reveal a twofold increase of T c at lower decompression pressure. It is found that the superconductivity enhancement in decompressed In2 Se3 is driven by the significant softening of phonons and gentle variation of carrier concentration combined in the pressure quench.