N‐Type Superconductivity in an Organic Mott Insulator Induced by Light‐Driven Electron‐Doping. Issue 33 (29th June 2017)
- Record Type:
- Journal Article
- Title:
- N‐Type Superconductivity in an Organic Mott Insulator Induced by Light‐Driven Electron‐Doping. Issue 33 (29th June 2017)
- Main Title:
- N‐Type Superconductivity in an Organic Mott Insulator Induced by Light‐Driven Electron‐Doping
- Authors:
- Suda, Masayuki
Takashina, Naoto
Namuangruk, Supawadee
Kungwan, Nawee
Sakurai, Hidehiro
Yamamoto, Hiroshi M. - Abstract:
- Abstract : The presence of interface dipoles in self‐assembled monolayers (SAMs) gives rise to electric‐field effects at the device interfaces. SAMs of spiropyran derivatives can be used as photoactive interface dipole layer in field‐effect transistors because the photochromism of spiropyrans involves a large dipole moment switching. Recently, light‐induced p‐type superconductivity in an organic Mott insulator, κ‐(BEDT‐TTF)2 Cu[N(CN)2 ]Br (κ‐Br: BEDT‐TTF = bis(ethylenedithio)tetrathiafulvalene) has been realized, thanks to the hole carriers induced by significant interface dipole variation in the spiropyran‐SAM. This report explores the converse situation by designing a new type of spiropyran monolayer in which light‐induced electron‐doping into κ‐Br and accompanying n‐type superconducting transition have been observed. These results open new possibilities for novel electronics utilizing a photoactive SAMs, which can design not only the magnitude but also the direction of photoinduced electric‐fields at the device interfaces. Abstract : Light‐induced superconductivity in an organic Mott insulator is realized by light‐driven electron doping. This effect can be attributed to photoinduced built‐in potential formation in a photochromic‐spiropyran monolayer. The polarity of the photoinduced mobile carriers can be systematically controlled by designing the dipole moment variation of the spiropyran monolayers.
- Is Part Of:
- Advanced materials. Volume 29:Issue 33(2017)
- Journal:
- Advanced materials
- Issue:
- Volume 29:Issue 33(2017)
- Issue Display:
- Volume 29, Issue 33 (2017)
- Year:
- 2017
- Volume:
- 29
- Issue:
- 33
- Issue Sort Value:
- 2017-0029-0033-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-06-29
- Subjects:
- field‐effect transistors -- Mott insulators -- photochromism -- superconductivity
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201606833 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 4554.xml