Selective fabrication of n‐ and p‐type SnO films without doping. Issue 3 (2nd March 2015)

• Record Type: Journal Article
• Authors: Hayashi, Hiroyuki; Katayama, Shota; Huang, Rong; Kurushima, Kosuke; Tanaka, Isao
• Is Part Of: Physica status solidi. Volume 9:Issue 3(2015:Mar.)
• Page Start: 192
• Page End: 196
• Publication Date: 2015-03-02
• Subjects: SnO -- thin films -- pulsed laser deposition -- oxide semiconductors -- epitaxial growth -- optical transmission -- oxygen partial pressure; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201510016
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Undoped n‐ and p‐type tin monoxide (SnO) films have been selectively fabricated by pulsed laser deposition with a Sn target and careful control of oxygen partial pressure. The films are epitaxially grown in optimal growth conditions on yttria‐stabilized zirconia (YSZ) substrates with out‐of‐plane and in‐plane orientation relationships of (001)SnO //(001)YSZ and [110]SnO //[100]YSZ, respectively. Both Seebeck and Hall measurements show consistent results on the carrier types of the films. The electron Hall mobility is approximately 11 cm 2 /Vs at room temperature and the carrier activation energy is 0.14 eV for the n‐type film. The growth at increased oxygen partial pressure yields p‐type films, demonstrating the selective fabrication of both n‐ and p‐type SnO films without doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Abstract : Oxides which can be selectively doped in both n‐ and p‐type should be very attractive for obtaining p–n homojunctions. The authors report the fabrication of n‐ and p‐type SnO films by pulsed laser deposition with an Sn target and careful control of oxygen partial pressure during the film growth. Both Seebeck and Hall measurements indicate that the carrier polarity is successfully converted by controlling the oxygen partial pressure.