Electronic Transport in Heterostructures of Chemical Vapor Deposited Graphene and Hexagonal Boron Nitride. Issue 12 (3rd November 2014)

• Record Type: Journal Article
• Authors: Qi, Zhengqing John; Hong, Sung Ju; Rodríguez‐Manzo, Julio A.; Kybert, Nicholas J.; Gudibande, Rajatesh; Drndić, Marija; Park, Yung Woo; Johnson, A. T. Charlie
• Is Part Of: Small. Volume 11:Issue 12(2015)
• Page Start: 1402
• Page End: 1408
• Publication Date: 2014-11-03
• Subjects: graphene -- hexagonal boron nitride -- heterostructures -- substrate engineering -- current annealing -- electron transport; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201402543
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : CVD graphene devices on stacked CVD hexagonal boron nitride (hBN) are demonstrated using a novel low‐contamination transfer method, and their electrical performance is systematically compared to devices on SiO2 . An order of magnitude improvement in mobility, sheet resistivity, current density, and sustained power is reported when the oxide substrate is covered with five‐layer CVD hBN.