Core–shell nanowire diode based on strain‐engineered bandgap (Phys. Status Solidi A 3∕2015). Issue 3 (March 2015)

• Record Type: Journal Article
• Authors: Liu, Pengbo; Huang, Hui; Liu, Xueyu; Bai, Min; Zhao, Danna; Tang, Zhenan; Huang, Xianliang; Kim, Ji‐Yeun; Guo, Jinwei
• Is Part Of: Physica status solidi. Volume 212:Issue 3(2015:Mar.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-03
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201570416
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Diodes as basic structures for semiconductor devices can be realized using a heterojunction or p‐type/n‐type doping. As for doping, the introduced impurities could substantially reduce the carrier mobility. For heterojunctions, on the other hand, engineering of the bandgap is required via integrating different materials, which is normally limited by the misfit strain resulting from the lattice mismatch between the materials. Similarly, bandgap engineering is important for realizing highperformance semiconductor devices such as lasers, LEDs, HBTs, HEMTs, etc. In comparison with bulk materials, nanowires (NWs) show advantages in accommodating the misfit strain. Thus, it is promising to strain‐engineer the NW bandgap for realizing highcarrier‐ mobility diodes. Pengbo Liu et al. (pp.617–622 ) carried out an investigation on nanowire diodes with a tapered InAs/InP core/shell structure. The strain distribution along the nanowire can be changed via the shell thickness and the gradient of the tapering. Due to the misfit strain between InAs/InP, a straininduced bandgap variation of 0.21 eV along the tapered InAs wire, which results in rectifying I–V characteristics of the diode, was realized with an InP shell thickness of 6.5 nm. Moreover, due to the optimized shell thickness and strain‐induced builtin electric field (including piezoelectric field), a recorded roomtemperature electron mobility of 22300 cm 2 /Vs was achieved. This concept of bandgap engineering would enable the designing of a new kind of nanowire device.