Cite
HARVARD Citation
Siche, D. et al. (2017). Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy. Crystal research and technology. 52 (8), p. n/a. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Siche, D. et al. (2017). Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy. Crystal research and technology. 52 (8), p. n/a. [Online].