Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many‐Body Effects. Issue 30 (17th May 2016)

• Record Type: Journal Article
• Authors: Liu, Bo; Zhao, Weijie; Ding, Zijing; Verzhbitskiy, Ivan; Li, Linjun; Lu, Junpeng; Chen, Jianyi; Eda, Goki; Loh, Kian Ping
• Is Part Of: Advanced materials. Volume 28:Issue 30(2016)
• Page Start: 6457
• Page End: 6464
• Publication Date: 2016-05-17
• Subjects: bandgap renormalization -- CYTOP substrate -- excitons -- monolayer transition‐metal dichalcogenides -- phase‐space filling effect; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201504876
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Intrinsic electrical and excitonic properties of monolayer transition‐metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid‐state back gates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.