Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air. Issue 30 (12th May 2016)

• Record Type: Journal Article
• Authors: Fonseca, Jose J.; Tongay, Sefaattin; Topsakal, Mehmet; Chew, Annabel R.; Lin, Alan J.; Ko, Changhyun; Luce, Alexander V.; Salleo, Alberto; Wu, Junqiao; Dubon, Oscar D.
• Is Part Of: Advanced materials. Volume 28:Issue 30(2016)
• Page Start: 6465
• Page End: 6470
• Publication Date: 2016-05-12
• Subjects: band structure modification -- gallium telluride -- layered semiconductors -- oxygen chemisorption; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201601151
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : A giant bandgap reduction in layered GaTe is demonstrated . Chemisorption of oxygen to the Te‐terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.