3D‐Stacked Vertical Channel Nonvolatile Polymer Memory. (15th January 2015)

• Record Type: Journal Article
• Authors: Hwang, Sun Kak; Cho, Suk Man; Kim, Kang Lib; Park, Cheolmin
• Is Part Of: Advanced Electronic Materials. Volume 1:Number 1/2(2015:Jan.)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2015-01-15
• Subjects: 3D stacked memory -- field‐effect transistor memory -- flexible memory -- low‐voltage operation -- organic memory -- vertical channels; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201400042
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A 3D‐stacked one transistor memory with vertically defined submicrometer channels is realized by carefully designing device architecture involving repetitive deposition of layers in combination with a one‐step bilayer transfer of a ferroelectric layer and a semiconducting one. The devices represent a milestone in the realization of mechanically flexible, one‐transistor polymer memory with high memory performance.