Thermal annealing effect on β‐Ga2O3 thin film solar blind photodetector heteroepitaxially grown on sapphire substrate. Issue 8 (9th May 2017)

• Record Type: Journal Article
• Authors: Rafique, Subrina; Han, Lu; Zhao, Hongping
• Is Part Of: Physica status solidi. Volume 214:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-09
• Subjects: β‐Ga2O3 thin films -- heteroepitaxy -- low pressure chemical vapor deposition -- solar‐blind photodetectors -- ultrawide bandgap; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700063
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : This paper presents the effect of thermal annealing on β‐Ga2 O3 thin film solar‐blind (SB) photodetector (PD) synthesized on c‐plane sapphire substrates by a low pressure chemical vapor deposition (LPCVD). The thin films were synthesized using high purity gallium (Ga) and oxygen (O2 ) as source precursors. The annealing was performed ex situ the under the oxygen atmosphere, which helped to reduce oxygen or oxygen‐related vacancies in the thin film. Metal/semiconductor/metal (MSM) type photodetectors were fabricated using both the as‐grown and annealed films. The PDs fabricated on the annealed films had lower dark current, higher photoresponse and improved rejection ratio ( R 250 / R 370 and R 250 / R 405 ) compared to the ones fabricated on the as‐grown films. These improved PD performances are due to the significant reduction of the photo‐generated carriers trapped by oxygen or oxygen‐related vacancies.