Evaluation of light trapping structures for liquid‐phase crystallized silicon on glass (LPCSG). Issue 8 (16th June 2017)

• Record Type: Journal Article
• Authors: Vetter, Michael; Jia, Guobin; Sanei, Azade; Gawlik, Annett; Plentz, Jonathan; Andrä, Gudrun
• Is Part Of: Physica status solidi. Volume 214:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-06-16
• Subjects: charge carrier lifetime -- laser crystallization -- multicrystalline materials -- photoconductance -- silicon -- thin films; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201600859
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Liquid‐phase crystallized silicon on glass (LPCSG) presents a promising material to fabricate high quality silicon thin films, e.g., for solar cells and modules. Using continuous wave line focus laser irradiation at 808 nm, about 10 μm thick microcrystalline silicon layers are fabricated by liquid‐phase crystallization of amorphous or nanocrystalline silicon layers deposited by electron beam evaporation on Borofloat 33 glass. To achieve high solar cell efficiencies with such thin silicon layers, effective light trapping structures at the silicon surface are needed to enhance the light absorption and thereby the current in the solar cell. At the same time, these surface structures must provide low surface recombination velocity to maintain high open circuit voltage ( V oc). Light trapping structures in LPCSG absorber prepared by conventional KOH texturing and by nanowire structuring of the solar cell backside are investigated. The impact of structures on short circuit current density ( I sc) is determined from optical measurements. As a new approach, effective carrier lifetime is measured in LPCSG absorbers using the quasi steady‐state photoconductance method to determine the impact of structuring on surface recombination and implied V oc of solar cell precursors. Carrier lifetimes in the range of 300–400 ns are measured indicating a carrier diffusion length of more than 20 μm, which is 2–3 times larger than the layer thickness. It is found that a slight pyramidal surface texture by KOH solution provides a high level of light trapping increasing I sc by 17–18% and maintaining high V oc (>600 mV). The potential for current enhancement of nanowire structuring is higher (≈20%), but further optimization of nanowire dimensions and of surface cleaning of nanowire structures is needed to overcome higher surface recombination and the resulting V oc losses.