Cite
HARVARD Citation
Usami, S. et al. (2017). Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes. Physica status solidi. 214 (8), p. n/a. [Online].
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Usami, S. et al. (2017). Effect of dislocations on the growth of p‐type GaN and on the characteristics of p–n diodes. Physica status solidi. 214 (8), p. n/a. [Online].