Demonstration of wafer‐level white light emitting diode with 92, 000 lm luminous flux. Issue 8 (August 2017)

• Record Type: Journal Article
• Authors: Zhang, Yibin; Xu, Jianwei; Zhao, Desheng; Huang, Hongjuan; Ding, Mingdi; Miao, Zhenlin; Wang, Yanming; He, Peng; Zhang, Baoshun; Cai, Yong
• Is Part Of: Physica status solidi. Volume 14:Issue 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-08
• Subjects: Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201770008
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract : A high‐power phosphor‐converted white wafer‐level LED with 92, 000 lm was demonstrated. The high‐power white LED was manufactured by utilising a blue single wafer‐level LED chip coated with a 60‐μm‐thick thin film phosphor layer. The electrical and optical characteristics of the LED were measured. Results show that the luminous fl ux and luminous efficacy reach to 92, 000 lm and ~89 lm/W at an input electrical power of 1035 W, respectively. The view angle is about 133°.