Electrical Manipulation of Orbital Occupancy and Magnetic Anisotropy in Manganites. (17th December 2014)

• Record Type: Journal Article
• Authors: Cui, Bin; Song, Cheng; Gehring, Gillian A.; Li, Fan; Wang, Guangyue; Chen, Chao; Peng, Jingjing; Mao, Haijun; Zeng, Fei; Pan, Feng
• Is Part Of: Advanced functional materials. Volume 25:Number 6(2015)
• Page Start: 864
• Page End: 870
• Publication Date: 2014-12-17
• Subjects: electrical control -- magnetic anisotropy -- manganites -- orbital occupancy; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201403370
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : Electrical manipulation of lattice, charge, and spin is realized respectively by the piezoelectric effect, field‐effect transistor, and electric field control of ferromagnetism, bringing about dramatic promotions both in fundamental research and industrial production. However, it is generally accepted that the orbital of materials are impossible to be altered once they have been made. Here, electric field is used to dynamically tune the electronic‐phase transition in (La, Sr)MnO3 films with different Mn 4+ /(Mn 3+ + Mn 4+ ) ratios. The orbital occupancy and corresponding magnetic anisotropy of these thin films are manipulated by gate voltage in a reversible and quantitative manner. Positive gate voltage increases the proportion of occupancy of the orbital and magnetic anisotropy that were initially favored by strain (irrespective of tensile and compressive), while negative gate voltage reduces the concomitant preferential orbital occupancy and magnetic anisotropy. Besides its fundamental significance in orbital physics, these findings might advance the process towards practical oxide‐electronics based on orbital. Abstract : The orbital occupancy and magnetic anisotropy of (La, Sr)MnO 3 films are manipulated by gate voltage in a reversible and quantitative manner, accompanied with the electronic phase transition. Positive and negative gate voltage increases and reduces the occupancy of the orbital and magnetic anisotropy that are initially favored by strain (irrespective of tensile and compressive), respectively.