Characteristics improvement of top‐gate self‐aligned amorphous indium gallium zinc oxide thin‐film transistors using a dual‐gate control. Issue 6 (16th June 2017)

• Record Type: Journal Article
• Authors: Nag, Manoj; De Roose, Florian; Myny, Kris; Steudel, Soeren; Genoe, Jan; Groeseneken, Guido; Heremans, Paul
• Is Part Of: Journal of the Society for Information Display. Volume 25:Issue 6(2017)
• Page Start: 349
• Page End: 355
• Publication Date: 2017-06-16
• Subjects: metal oxide -- a‐IGZO -- TFT -- self‐aligned -- dual gate -- display technology; Information display systems -- Periodicals; 621.38154205
• DOI: 10.1002/jsid.558
• Languages: English
• ISSNs: 1071-0922

Abstract

Abstract: In this work, we have reported dual‐gate amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs), where a top‐gate self‐aligned TFTs has a secondary bottom gate and the TFT integration comprises only five mask steps. The electrical characteristics of a‐IGZO TFTs under different gate control are compared. With the enhanced control of the channel with two gates connected together, parameters such as on current (ION ), sub‐threshold slope (SS −1 ), output resistance, and bias‐stress instabilities are improved in comparison with single‐gate control self‐aligned a‐IGZO TFTs. We have also investigated the applicability of the dual‐gate a‐IGZO TFTs in logic circuitry such as 19‐stage ring oscillators. Abstract : In this work, we have reported dual‐gate amorphous indium gallium zinc oxide thin‐film transistors. With dual‐gate control, the parameters such as on current (ION ), sub‐threshold slope (SS −1 ), output resistance, and bias‐stress instabilities are improved in comparison with single‐gate control amorphous indium gallium zinc oxide thin‐film transistors.