Highly responsive photoconductance in a Sb2SeTe2 topological insulator nanosheet at room temperature. Issue 62 (9th August 2017)

• Record Type: Journal Article
• Authors: Huang, Shiu-Ming; Huang, Shih-Jhe; Yan, You-Jhih; Yu, Shih-Hsun; Chou, Mitch; Yang, Hung-Wei; Chang, Yu-Shin; Chen, Ruei-San
• Is Part Of: RSC advances. Volume 7:Issue 62(2017)
• Page Start: 39057
• Page End: 39062
• Publication Date: 2017-08-09
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c7ra06151j
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : SEM picture of the Sb2 SeTe2 nanosheet. The top-right figure shows the linear current–voltage curve indicating the ohmic contact between the Pt electrodes and Sb2 SeTe2 nanosheet. Abstract : A photocurrent was applied to a Sb2 SeTe2 topological insulator nanosheet at a wavelength of 325 nm, and it exhibited extremely high performance such that the responsivity and photoconductive gain are 354 A W −1 and 1531, respectively, at a bias of 0.1 V. This photoresponse is orders of magnitude higher than most reported values for topological insulators and two-dimensional transitional metal dichalcogenides. The photoresponse is linear with the applied voltage. Responsivity and gain under vacuum are higher than that in air by a factor of 2.5. This finding suggests that the Sb2 SeTe2 topological insulator nanosheet has great potential for ultraviolet optoelectronic device applications.