Unipolar resistive switching properties of Pr-doped ZnO thin films. (August 2017)

• Record Type: Journal Article
• Authors: He, Shuai; Hao, Aize; Qin, Ni; Bao, Dinghua
• Is Part Of: Ceramics international. Volume 43(2017)Supplement 1
• Page Start: S474
• Page End: S480
• Publication Date: 2017-08
• Subjects: Resistive switching -- Pr-doped ZnO -- Thin film; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2017.05.213
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: Pr-doped ZnO hexagonal structure thin films with c-axis preferred orientation were deposited on Pt/Ti/SiO2 /Si substrates by chemical solution deposition technique. The effects of Pr doping amount on the resistive switching behavior of Pt/Zn1−x Prx O/Pt (x = 0, 0.01, 0.03, and 0.05) memory cells were investigated. The results showed that Pr-doping lowered the c-axis orientation degree of the ZnO thin films, but improved the resistive switching properties of Pt/Zn1−x Prx O/Pt devices. The resistive switching devices exhibited good endurance, long retention, and uniform switching voltages. I-V characteristics and their temperature dependence analysis indicated that the conduction mechanism of LRS was Ohmic behavior, and that of HRS at relatively higher voltage is trap-controlled space charge limited current. The physical origin of the resistive switching can be referred to the formation and rupture of the oxygen vacancies related filaments.