Efficient pure green emission from Er-doped Ga2O3 films. Issue 31 (12th July 2017)

• Record Type: Journal Article
• Authors: Chen, Zhengwei; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qixin
• Is Part Of: CrystEngComm. Volume 19:Issue 31(2017)
• Page Start: 4448
• Page End: 4458
• Publication Date: 2017-07-12
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c7ce00553a
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : This review describes recent advances in the properties of Er-doped Ga2 O3 films and light-emitting devices based on these films. Abstract : This study briefly reviews effect of the doping content on the structure, surface morphology, and optical properties of Er-doped Ga2 O3 films on sapphire and Si substrates grown via pulsed laser deposition. Temperature insensitive pure green luminescence has been demonstrated from these films. We succeeded in fabricating light-emitting devices (LEDs) based on Ga2 O3 :Er/Si heterojunctions. Bright pure green emission can be observed by the naked eye from the LEDs. The driven voltage of these LEDs is 6.2 V, which is lower than those of ZnO:Er/Si and GaN:Er/Si devices. In addition, we determined the values of the valence band offset and conduction band offset of the Ga2 O3 /Si heterojunctions. The results obtained in this study shall provide a useful guideline for the development of Si-based green LEDs using Ga2 O3 as the host materials for Er 3+ ions.