1D π‐d Conjugated Coordination Polymers for Multilevel Memory of Long‐Term and High‐Temperature Stability. (26th May 2017)

• Record Type: Journal Article
• Authors: Cheng, Xue‐Feng; Shi, Er‐Bo; Hou, Xiang; Shu, Jie; He, Jing‐Hui; Li, Hua; Xu, Qing‐Feng; Li, Na‐Jun; Chen, Dong‐Yun; Lu, Jian‐Mei
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-26
• Subjects: 1D coordination polymers -- d‐π conjugation -- resistive random access memory -- ternary structures; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700107
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : Ternary resistive random access memory (RRAM) devices are fabricated from 1D d‐π conjugated coordination polymer chains, which are synthesized via the coordination between Ni(II) salts and benzenetetramine or 3, 3′, 4, 4′‐biphenyltetramine in a solution process. The as‐fabricated devices can retain their memory states for as long as three months at room temperature or work for at least 10 000 s at 150 °C, which is the highest working temperature reported for a ternary RRAM at the time of writing this paper. Thermogravimetric analysis indicates good thermal stability of these two materials because of their good crystallinity and strong intermolecular interaction. The long‐term and high‐temperature stability makes 1D conjugated coordination polymer chains a promising candidate for use as next‐generation material for high‐density data storage via RRAM techniques. Abstract : Two 1D conjugated coordination polymer (CCP) chains are synthesized and fabricated into memory devices that perform ternary resistive random access memory (RRAM) behaviors. Benefiting from strong intermolecular interaction, the devices can be retained for three months and work at 150 °C for more than 10 000 s, which make 1D CCPs a promising candidate for next‐generation materials for high‐density data storage.