A Lewis‐Acid Monopolar Gate Dielectric for All‐Inkjet‐Printed Highly Bias‐Stress Stable Organic Transistors. (24th May 2017)

• Record Type: Journal Article
• Authors: Jiang, Chen; Ma, Hanbin; Hasko, David Gregory; Guo, Xiaojun; Nathan, Arokia
• Is Part Of: Advanced Electronic Materials. Volume 3:Number 8(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-05-24
• Subjects: bias‐stress stability -- inkjet printing -- Lewis‐acid monopolarity -- organic transistors; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700029
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A Lewis‐acid monopolar polymer with both hydrophobicity and lipophilicity is used as the gate dielectric for all‐inkjet‐printed organic thin‐film transistors. The hydrophobicity of this polymer prevents water molecules from migrating and being trapped in the gate dielectric, while its lipophilicity allows good wetting by organic solvents for further deposition of other functional layers. These organic thin‐film transistors demonstrate high bias‐stress stability under both positive and negative bias in ambient air. This study unlocks the potential of all‐inkjet‐printed organic thin‐film transistors for real‐world low‐cost large‐area applications. Abstract : A Lewis‐acid monopolar polymer with both hydrophobicity and lipophilicity is used as the gate dielectric for all‐inkjet‐printed highly bias‐stress stable organic thin‐film transistors. The hydrophobicity of this polymer prevents water molecules from migrating and being trapped in the gate dielectric, while its lipophilicity allows good wetting by organic solvents for further deposition of other functional layers.