High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics. Issue 29 (12th July 2017)
- Record Type:
- Journal Article
- Title:
- High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics. Issue 29 (12th July 2017)
- Main Title:
- High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics
- Authors:
- Xu, Mingkun
Wang, Jimmy
Xue, Zhaoguo
Wang, Junzhuan
Feng, Ping
Yu, Linwei
Xu, Jun
Shi, Yi
Chen, Kunji
Roca i Cabarrocas, Pere - Abstract:
- Abstract : A robust nano-droplet-scanning crystallization of a-Si into a self-positioned and transparent Si nanowire array for high performance fin-like thin film transistors. Abstract : High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm 2 V −1 s −1 and an excellent subthreshold swing of only 163 mV dec −1, via a low temperature <350 °C thin film process. More importantly, precise integration of tiny poly-Si channels, measuring only 60 nm in diameter and 2 μm apart on glass substrates, provides an unprecedented transparent Si-based TFT technology to visible light, which is widely sought for the next generation of high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays inAbstract : A robust nano-droplet-scanning crystallization of a-Si into a self-positioned and transparent Si nanowire array for high performance fin-like thin film transistors. Abstract : High mobility, scalable and even transparent thin-film transistors (TFTs) are always being pursued in the field of large area electronics. While excimer laser-beam-scanning can crystallize amorphous Si (a-Si) into high mobility poly-Si, it is limited to small areas. We here demonstrate a robust nano-droplet-scanning strategy that converts an a-Si:H thin film directly into periodic poly-Si nano-channels, with the aid of well-coordinated indium droplets. This enables the robust batch-fabrication of high performance Fin-TFTs with a high hole mobility of >100 cm 2 V −1 s −1 and an excellent subthreshold swing of only 163 mV dec −1, via a low temperature <350 °C thin film process. More importantly, precise integration of tiny poly-Si channels, measuring only 60 nm in diameter and 2 μm apart on glass substrates, provides an unprecedented transparent Si-based TFT technology to visible light, which is widely sought for the next generation of high aperture displays and fully transparent electronics. The successful implementation of such a reliable nano-droplet-scanning strategy, rooted in the strength of nanoscale growth dynamics, will enable eventually the batch-manufacturing and upgrade of high performance large area electronics in general, and high definition and scalable flat-panel displays in particular. … (more)
- Is Part Of:
- Nanoscale. Volume 9:Issue 29(2017)
- Journal:
- Nanoscale
- Issue:
- Volume 9:Issue 29(2017)
- Issue Display:
- Volume 9, Issue 29 (2017)
- Year:
- 2017
- Volume:
- 9
- Issue:
- 29
- Issue Sort Value:
- 2017-0009-0029-0000
- Page Start:
- 10350
- Page End:
- 10357
- Publication Date:
- 2017-07-12
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c7nr02825c ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 2927.xml