PdGe contact fabrication on Se-doped Ge. (October 2017)

• Record Type: Journal Article
• Authors: Descoins, M.; Perrin Toinin, J.; Zhiou, S.; Hoummada, K.; Bertoglio, M.; Ma, R.; Chow, L.; Narducci, D.; Portavoce, A.
• Is Part Of: Scripta materialia. Number 139(2017)
• Page Start: 104
• Page End: 107
• Publication Date: 2017-10
• Subjects: Germanium -- Palladium -- Selenium -- Contact -- Reaction; Materials -- Periodicals; Metallurgy -- Periodicals; Metalen; Legeringen; Materiaalkunde; Metals, metalworking and machinery industries; Metals; Electronic journals; 620.11
• DOI: 10.1016/j.scriptamat.2017.06.029
• Languages: English
• ISSNs: 1359-6462

Abstract

Abstract: PdGe contact fabrication on Se-doped Ge(001) is investigated. PdGe thin film resistivity is two times lower if the PdGe layer is grown by Pd reactive diffusion on Se-doped Ge, compared to PdGe layer grown in the same condition on Se-free Ge. The phase sequence and the phase growth kinetics during Pd reactive diffusion with Ge are not modified by the presence of Se atoms. However, the PdGe film texture is different with Se, and Se segregates at the PdGe/Ge interface. These results suggest that Se atoms may be used to produce efficient contacts on n -type Ge. Graphical abstract: