Transport mechanisms in SnO2:N, H thin film grown by chemical vapor deposition. Issue 7 (15th March 2017)

• Record Type: Journal Article
• Authors: Jiang, Jie; Ostheim, Lars; Hartung, David; Lu, Yinmei; Hofmann, Detlev M.; Eickhoff, Martin; Klar, Peter J.
• Is Part Of: Physica status solidi. Volume 254:Issue 7(2017)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2017-03-15
• Subjects: chemical vapor deposition -- nitrogen incorporation -- tin dioxide thin film -- transport; Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201700003
• Languages: English
• ISSNs: 0370-1972

Abstract

Abstract : Tin oxide thin films with nitrogen and hydrogen as dopants (SnO2 :N, H) were prepared by chemical vapor deposition. To investigate the charge transport mechanisms in the samples the electrical conductivities were measured in the temperature range from 280 K down to 10 K and the mechanisms were analyzed. With decreasing temperature, the dominant electrical transport processes can be well described by the sequence of band conduction, D − state conduction and nearest‐neighbor‐hopping. We also studied the effect of different nitrogen and hydrogen concentrations, originating from a variation of the NH3 flow rate in the growth process, on the charge transport mechanisms in the films.